http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SUM2153 0.81a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-jan-2013 rev. a page 1 of 4 rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. mechanical data trench technology supper high density cell design excellent on resistance extremely low threshold voltage application dc-dc converter circuit load switch marking package information package mpq leader size sot-363 3k 7 inch maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit 10s steady state drain C source voltage v ds 20 v gate C source voltage v gs 6 v continuous drain current 1 t a = 25c i d 0.89 0.81 a t a = 70c 0.71 0.64 power dissipation 1 t a = 25c p d 0.38 0.31 w t a = 70c 0.24 0.2 continuous drain current 2 t a = 25c i d 0.76 0.69 a t a = 70c 0.61 0.55 power dissipation 2 t a = 25c p d 0.28 0.23 w t a = 70c 0.17 0.15 pulsed drain current 3 i dm 1.4 a lead temperature t l 260 c operating junction & storage temperature range t j , t stg 150, -55~150 c sot-363 ref. millimeter ref. millimeter min. max. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k 8 e 1.10 1.50 l 0.650 typ. f 0.10 0.35 b l f h c j d g k a e 53
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SUM2153 0.81a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-jan-2013 rev. a page 2 of 4 thermal resistance ratings note: 1. surface mounted on fr4 board using 1 square inch pad size, 1oz copper. 2. surface mounted on fr4 board using minimum pad s ize, 1oz copper 3. repetitive rating, pulse width limited by juncti on temperature, tp=10 s, duty cycle=1% 4. repetitive rating, pulse width limited by juncti on temperature tj=150c. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v (br)dss 20 - - v v gs =0, i d =250 a zero gate voltage drain current i dss - - 1 a v ds =16v, v gs =0 gate-source leakage i gss - - 5 a v ds =0 , v gs = 5v gate-threshold voltage v gs(th) 0.45 0.58 0.85 v v ds =v gs, i d =250 a drain-source on resistance r ds(on) - 220 310 m v gs =4.5v, i d =0.55a - 260 360 v gs =2.5v, i d =0.45a - 320 460 v gs =1.8v, i d =0.35a forward transconductance g fs - 2 - s v ds =5v, i d = 0.55a body-drain diode ratings diode forward onCvoltage v sd 0.5 0.7 1.5 v i s =350ma, v gs =0 dynamic characteristics input capacitance c iss - 50 - pf v ds =10v, v gs =0, f=100khz output capacitance c oss - 13 - reverse transfer capacitance c rss - 8 - total gate charge q g(tot) - 1.15 - nc v ds =10v, v gs =4.5v, i d =0.55a threshold gate charge q g(th) - 0.06 - gate-to-source charge q gs - 0.15 - gate-to-drain charge q gd - 0.23 - turn-on delay time t d(on) - 22 - ns v dd =10v, i d =0.55a, v gs =4.5v, r g =6 . rise time t r - 80 - turn-off delay time t d(off) - 700 - fall time t f - 380 - parameter symbol rating unit typ. max. single operation junction-to-ambient thermal resistance 1 t Q 10s r ja 276 325 c / w steady state 328 395 junction-to-ambient thermal resistance 2 t Q 10s r ja 375 445 steady state 446 532 junction-to-case thermal resistance steady state r jc 260 300 dual operation junction-to-ambient thermal resistance 1 t Q 10s r ja 310 360 c / w steady state 366 432 junction-to-ambient thermal resistance 2 t Q 10s r ja 415 486 steady state 498 575 junction-to-case thermal resistance steady state r jc 265 305
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SUM2153 0.81a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-jan-2013 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. SUM2153 0.81a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet elektronische bauelemente 11-jan-2013 rev. a page 4 of 4 characteristic curves
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